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SSM3J15FV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15FV
High Speed Switching Applications Analog Switch Applications
* * Optimum for high-density mounting in small packages Low on-resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Unit: mm
0.22 0.05 1.2 0.05 0.32 0.05 0.80 0.05
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 20 -100 -200 150 150 -55~150 Unit V V mA mW C C
1.2 0.05
0.8 0.05
0.4 0.4
1
1
3 2
0.13 0.05
1.GATE 2.SOURCE 3.DRAIN
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.585 mm )
VESM JEDEC JEITA TOSHIBA
0.5 0.05
2-1L1B
Weight: 0.0015 g(typ.)
0.5mm 0.45mm 0.45mm 0.4mm
Marking
3
Equivalent Circuit (top view)
3
DQ
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff VDD = -5 V, ID = -10 mA, VGS = 0~-5 V VDS = -3 V, VGS = 0, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 ID = -0.1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -10 mA ID = -10 mA, VGS = -4 V ID = -1 mA, VGS = -2.5 V MIN. -30 -1.1 20 TYP. 8 14 9.1 3.5 8.6 65 175 MAX. 1 -1 -1.7 12 32 UNIT A V A V mS pF pF pF ns

Switching Time Test Circuit
(a) Test circuit
0 IN 50 RL VDD -5 V 90% OUT
(b) VIN
0V
10%
-5V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -5 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C
VDD
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device.
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ID - VDS
-250 Common Source Ta=25C -10 -7 -5 -1000 Common Source VDS=-3V Ta=100C -10 25C -1 -25C
ID - VGS
-200 Drain Current ID(mA)
-150 -3.3 -100 -3.0 -2.7 -2.5 VGS=-2.3V 0 -0.5 -1 -1.5 Drain-Source Voltage VDS(V) -2
-50
Drain Current ID(mA)
-4
-100
-0.1
0
-0.01 0 -1 -2 -3 -4 Gate-Source Voltage VGS(V) -5
Drain-Source on resistance RDS(ON) ()
Drain-Source on resistance RDS(ON) ()
40
RDS(ON) - ID
RDS(ON) - VGS
20 18 16 14 12 10 8 6 4 2 0 0 -2 -4 -6 -8 Gate-Source Voltage VGS (V) -10 -25C Ta=100C 25 Source Common ID= -1mA
30
Common Source Ta=25C
20
10
VGS=-2.5V -4V
0 -1 -10 -100 Drain Current ID(mA) -1000
RDS(ON) - Ta
30
Drain-Source on resistance RDS(ON) ()
Vth - Ta
-2 -1.8 Gate threshold valtage Vth(V) -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 Common Source ID=-0.1mA VDS=-3V
Common Source
20
VGS=-2.5V,ID=-1mA
10 -4V,-10mA
0 -25 0 25 50 75 100 125 150 Ambient temperature Ta(C)
0 -25 0 25 50 75 100 125 150 Ambient temperature Ta(C)
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|Yfs| - ID
1000 Drain reveres current IDR (mA) Forword transfer admittance |Yfs| (mS) Common Source VDS= -3V Ta=25C 100 -250 Common Source VGS=0V Ta=25C
IDR - VDS
-200
-150
-100
10
-50
1 -1 -10 -100 Drain current ID (mA) -1000
0 0 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage VDS (V) 1.4
C - VDS
100 Common Source VGS=0V f=1MHz Ta=25C 10 Ciss Coss Crss 1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100
10000
t - ID
Common Source VDD= -5V VGS=0~-5V Ta=25C
Switching Timet (ns)
toff 1000 tf
Capacitance C (pF)
100
ton tr
10 -0.1
-1 -10 Drain Current ID (mA)
-100
PD - Ta 250 mounted on FR4 board (25.4mmx25.4mmx1.6t Cu Pad:0.585mm2)
Drain power dissipation Pd (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(C)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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